Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is /spl sim/330 μW with slope efficiency of 0.18 W/A at room temperatur...

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Veröffentlicht in:	IEEE photonics technology letters 2006-04, Vol.18 (7), p.847-849
Hauptverfasser:	Chang, Y.H., Peng, P.C., Tsai, W.K., Lin, G., FangI Lai, Hsiao, R.S., Yang, H.P., Yu, H.C., Lin, K.F., Chi, J.Y., Wang, S.C., Kuo, H.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Gallium arsenide Modulation Noise levels Optical fiber communication Optical surface waves Photonics Power generation Quantum dots quantum dots (QDs) single mode Surface emitting lasers Surface waves surface-emitting laser Temperature Vertical cavity surface emission lasers Vertical cavity surface emitting lasers Wavelengths
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Beschreibung
Zusammenfassung:	We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is /spl sim/330 μW with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of >30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2006.871831