Analyzing memory effect in RF power amplifier using three-box modeling

Analyzing memory effect in RF power amplifier using three-box modeling

A three-box modeling has been used to simulate the behavioral modeling of the microwave power amplifiers (PAs) in this paper. By this modeling, the cause of the memory effect has been analyzed, and we draw the conclusion that the memory effect is due to effect of the impedance of bias circuit and ma...

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Bibliographische Detailangaben
Hauptverfasser: Wang Huadong, Wu Zhengde, Bao Jinfu, Tang Xiaohong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial neural networks
Cause effect analysis
Circuit simulation
Intermodulation distortion
Nonlinear filters
Nonlinear systems
Power amplifiers
Power system modeling
Radio frequency
Radiofrequency amplifiers
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Beschreibung
Zusammenfassung:A three-box modeling has been used to simulate the behavioral modeling of the microwave power amplifiers (PAs) in this paper. By this modeling, the cause of the memory effect has been analyzed, and we draw the conclusion that the memory effect is due to effect of the impedance of bias circuit and match network at envelope frequency and second time harmonic frequency. The results of the simulation and measurement have been given to show the memory effect of a power amplifier.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2005.1606788