High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application

High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application

In this paper, we present high drain efficiency of 34% and wide-band characteristics of single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA application. We also confirmed that GaN HEMT power amplifier has low memory effect and adjacent channel leakage power ratio (A.C.L.R.) is sufficiently...

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Bibliographische Detailangaben
Hauptverfasser: Kawano, A., Adachi, N., Tateno, Y., Mizuno, S., Ui, N., Nikaido, J., Sano, S.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Base stations
Broadband amplifiers
digital predistortion
Frequency
Gallium nitride
GaN HEMT
HEMTs
high efficiency
High power amplifiers
Multiaccess communication
Neodymium
power amplifier
Power amplifiers
Radiofrequency amplifiers
wide-band
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Beschreibung
Zusammenfassung:In this paper, we present high drain efficiency of 34% and wide-band characteristics of single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA application. We also confirmed that GaN HEMT power amplifier has low memory effect and adjacent channel leakage power ratio (A.C.L.R.) is sufficiently reduced for the application by utilizing digital predistortion (D.P.D.) system.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2005.1606618