100 ° C 10 Gbit/s directly modulated laser incorporating a novel semi-insulating buried heterostructure
We describe a packaged 10 Gbit/s directly modulated laser operating at > 100 degC. The laser incorporates a novel semi-insulating buried heterostructure that minimises the internal capacitance while reducing the thermal impedance
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | We describe a packaged 10 Gbit/s directly modulated laser operating at > 100 degC. The laser incorporates a novel semi-insulating buried heterostructure that minimises the internal capacitance while reducing the thermal impedance |
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