100 ° C 10 Gbit/s directly modulated laser incorporating a novel semi-insulating buried heterostructure

We describe a packaged 10 Gbit/s directly modulated laser operating at > 100 degC. The laser incorporates a novel semi-insulating buried heterostructure that minimises the internal capacitance while reducing the thermal impedance

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Bibliographische Detailangaben
Hauptverfasser: White, J.K., Wylde, J., Walters, H., Grevatt, T., Abbott, B., Bult, N., Letal, G., Benwell, S., Brooks, N., Firth, P., Blaauw, C., Knight, G., Das, S.R., Jones, T., Kim, N., Woodard, A., Zhang, S., Fekecs, A.
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Sprache:eng
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Zusammenfassung:We describe a packaged 10 Gbit/s directly modulated laser operating at > 100 degC. The laser incorporates a novel semi-insulating buried heterostructure that minimises the internal capacitance while reducing the thermal impedance