A MEMS resonant strain sensor with 33 nano-strain resolution in a 10 kHz bandwidth

A MEMS resonant strain sensor with 33 nano-strain resolution in a 10 kHz bandwidth

In this paper the authors demonstrate a high performance strain measurement system that consists of a polysilicon double ended tuning fork (DETF) resonant sensor and surface mount electronics to measure its output. This system achieves a resolution of 33 nano-strain (nepsiv) in a bandwidth of 10 kHz...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wojciechowski, K.E., Boser, B.E., Pisano, A.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Capacitive sensors
Counting circuits
Frequency modulation
Micromechanical devices
Phase locked loops
Resonance
Resonant frequency
Strain measurement
Voltage-controlled oscillators
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper the authors demonstrate a high performance strain measurement system that consists of a polysilicon double ended tuning fork (DETF) resonant sensor and surface mount electronics to measure its output. This system achieves a resolution of 33 nano-strain (nepsiv) in a bandwidth of 10 kHz, and has a noise floor of 60 pico-strain per root hertz (pepsiv/radicHz) up to 1kHz. The 60 pepsiv/radicHz noise floor is equivalent to a displacement resolution of 12 femto-meters per root hertz (fm/radicHz). To the best of the author's knowledge the smallest reported displacement resolution using surface micromachining is 16 fm/radicHz (Geen et al., 2002)
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2005.1597857