High-power 1.9-μm diode laser arrays with reduced far-field angle

High-power 1.9-μm diode laser arrays with reduced far-field angle

High-power 1.91-mum (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44deg full-width at half-maximum. For sin...

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Veröffentlicht in:IEEE photonics technology letters 2006-02, Vol.18 (4), p.628-630
Hauptverfasser: Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.
Format: Artikel
Sprache:eng
Schlagworte:
Biomedical optical imaging
Diode lasers
Gas lasers
Optical arrays
Optical design
Optical pumping
Optical refraction
Optical variables control
Optical waveguides
power lasers
Semiconductor laser arrays
semiconductor lasers
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Zusammenfassung:High-power 1.91-mum (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44deg full-width at half-maximum. For single emitters, a continuous-wave (CW) output power of nearly 2 W has been observed. We have achieved 16.9 W in CW mode at a heat sink temperature of 20degC. The efficiencies of more than 25% are among the highest values reported so far for GaSb-based diode lasers, and allow the use of passively cooled and, thus, less expensive heat sink technologies
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.870146