Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100 nm
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| creator | Mokkapati, S. Lever, P. Tan, H.H. Jagadish, C. McBean, K.E. Phillips, M.R. |
| description | We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100 nm |
| doi_str_mv | 10.1109/COMMAD.2004.1577543 |
| format | Conference Proceeding |
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| ispartof | Conference on Optoelectronic and Microelectronic Materials and Devices, 2004, 2004, p.273-276 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Epitaxial growth Indium gallium arsenide integratedoptoelectronic devices Laser tuning Optoelectronic devices Photonic band gap Photonic integrated circuits Quantum dot Quantum dot lasers Quantum dots selective area epitaxy Substrates US Department of Transportation |
| title | Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration |
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