Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100 nm

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Bibliographische Detailangaben
Hauptverfasser: Mokkapati, S., Lever, P., Tan, H.H., Jagadish, C., McBean, K.E., Phillips, M.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial growth
Indium gallium arsenide
integratedoptoelectronic devices
Laser tuning
Optoelectronic devices
Photonic band gap
Photonic integrated circuits
Quantum dot
Quantum dot lasers
Quantum dots
selective area epitaxy
Substrates
US Department of Transportation
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Beschreibung
Zusammenfassung:We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100 nm
DOI:10.1109/COMMAD.2004.1577543