UVLED based on carrier localization in AlGaN

UVLED based on carrier localization in AlGaN

AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.

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Bibliographische Detailangaben
Hauptverfasser: Collins, C.J., Sampath, A.V., Garrett, G.A., Shen, H., Wraback, M., Readinger, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum alloys
Aluminum gallium nitride
Biomedical optical imaging
Fluctuations
Light emitting diodes
Optical sensors
Photoluminescence
Plasma temperature
Reflectivity
Temperature sensors
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Beschreibung
Zusammenfassung:AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.
DOI:10.1109/CLEO.2005.201707