Receiver measurements of pHEB beam lead mixers on 3-/spl mu/m silicon

Receiver measurements of pHEB beam lead mixers on 3-/spl mu/m silicon

We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 /spl mu/m thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz ar...

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Hauptverfasser: Bryerton, E., Percy, R., Bass, R., Schultz, J., Oluleye, O., Lichtenberger, A., Ediss, G.A., Pan, S.K., Goltsman, G.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Assembly
Dielectric losses
Dielectric substrates
Extraterrestrial measurements
Frequency
Microstrip
Noise measurement
Receivers
Silicon on insulator technology
Wavelength measurement
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Beschreibung
Zusammenfassung:We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 /spl mu/m thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
ISSN:2162-2027
DOI:10.1109/ICIMW.2005.1572513