High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m

We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is compose...

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Bibliographische Detailangaben

Hauptverfasser:	Pfahler, C., Manz, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Wagner, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Brightness Diode lasers Heat sinks Laser beams Laser excitation Laser modes Optical materials Power conversion Power generation Temperature
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