High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m

High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m

We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is compose...

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Hauptverfasser: Pfahler, C., Manz, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Wagner, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Brightness
Diode lasers
Heat sinks
Laser beams
Laser excitation
Laser modes
Optical materials
Power conversion
Power generation
Temperature
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Zusammenfassung:We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is composed of a ridge-waveguide (RW) section followed by a trapezoidal amplifier. The width of both sections has been varied in order to study filamentation effects which have already been described in other material systems.
DOI:10.1109/CLEOE.2005.1567887