Millimeter wave HEMTs of R&PC /spl Lt/Istok/spl Gt

First results of heterostructure field effect transistors with 120, 300 and 600 /spl mu/m gate widths developed in R&PC /spl Lt/Istok/spl Gt/ are presented. Pseudo-morphic high electron mobility epitaxial structure were grown by molecular beam epitaxy. Typical channel carrier concentration 2.0 1...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Vasil'ev, V.L., Zemliakov, V.E., Maleev, N.A., Zhukov, A.E., Vasil'ev, A.P., Mikhrin, V.S., Ustinov, V.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fabrication Gallium arsenide HEMTs Heterojunction bipolar transistors Indium compounds MESFETs Noise figure PHEMTs Resists Vacuum technology
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