Millimeter wave HEMTs of R&PC /spl Lt/Istok/spl Gt

First results of heterostructure field effect transistors with 120, 300 and 600 /spl mu/m gate widths developed in R&PC /spl Lt/Istok/spl Gt/ are presented. Pseudo-morphic high electron mobility epitaxial structure were grown by molecular beam epitaxy. Typical channel carrier concentration 2.0 10/sup 12/ cm/sup -2/ with mobilities > 6000 cm/sup 2//V-s were obtained at 300 K. The transistors were fabricated with 0,15-0,25 /spl mu/m T-gate. The devises demonstrates minimum noise figure less than 2 dB, associated gain more than 5 dB at 40 GHz, and output power density about 900 mW/mm at centimeter wave-length band with power added efficiency more then 30%.