Retention characteristics of zero-capacitor RAM (Z-RAM) cell based on FinFET and tri-gate devices

In this paper we experimentally study for the first time the retention characteristics of Z-RAM cells based on CMOS FinFET and tri-gate devices. A retention time of few milliseconds is measured at room temperature on 100 nm devices. This FinFET based Z-RAM memory will allow manufacturing of very low...

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Hauptverfasser:	Bassin, C., Fazan, P., Xiong, W., Cleavelin, C.R., Schulz, T., Schruefer, K., Gostkowski, M., Patruno, P., Maleville, C., Nagoga, M., Okhonin, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS logic circuits CMOS memory circuits CMOS technology FinFETs Instruments Nonvolatile memory Programmable logic arrays Random access memory Read-write memory Silicon
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Beschreibung
Zusammenfassung:	In this paper we experimentally study for the first time the retention characteristics of Z-RAM cells based on CMOS FinFET and tri-gate devices. A retention time of few milliseconds is measured at room temperature on 100 nm devices. This FinFET based Z-RAM memory will allow manufacturing of very low cost DRAMs and eDRAMs for 45 and sub 45-nm generations.
ISSN:	1078-621X 2577-2295
DOI:	10.1109/SOI.2005.1563588