A novel self-aligned substrate-diode structure for SOI technologies

A novel self-aligned substrate-diode structure for SOI technologies

In this work, we describe novel self-aligned diode and resistor structures and their process integration into an advanced 90nm SOI technology. Their superior device characteristics over conventional device structures built within the SOI film is described.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Pelella, M.M., Burbach, G., Salman, A., Beebe, A., Chan, D., Buller, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Conductivity
MOSFETs
Research and development
Resistors
Semiconductor diodes
Silicon on insulator technology
Substrates
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this work, we describe novel self-aligned diode and resistor structures and their process integration into an advanced 90nm SOI technology. Their superior device characteristics over conventional device structures built within the SOI film is described.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2005.1563576