Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method

A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimension...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Aoyama, J., Takani, T., Toyabe, T., Kalachev, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Channel bank filters Circuit simulation Low voltage Mathematical model MOS devices MOSFETs Numerical simulation Poisson equations Space charge Threshold voltage
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