Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method

Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method

A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimension...

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Bibliographische Detailangaben
Hauptverfasser: Aoyama, J., Takani, T., Toyabe, T., Kalachev, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Channel bank filters
Circuit simulation
Low voltage
Mathematical model
MOS devices
MOSFETs
Numerical simulation
Poisson equations
Space charge
Threshold voltage
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Beschreibung
Zusammenfassung:A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2005.201499