Microtechnology with SILAR and RPP for semiconductor oxide gas sensors

Microtechnology with SILAR and RPP for semiconductor oxide gas sensors

Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and rapid photothermal processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence,...

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Bibliographische Detailangaben
Hauptverfasser: Shishiyanu, S.T., Shishiyanu, T.S., Lupan, O.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gas detectors
Glass
Scanning electron microscopy
Sputtering
Substrates
Surface morphology
Temperature sensors
Thin film sensors
Tin
Zinc oxide
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Beschreibung
Zusammenfassung:Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and rapid photothermal processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence, sensing properties and operating temperature of impurity doped zinc oxide thin films. The highest sensitivity to 1.5 ppm NO/sub 2/ was obtained for 5 - 10 at.% Sn concentration in the solution of ions and RPP temperature of 550-650/spl deg/C.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2005.1558748