A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems

A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a 0.13 micron BICMOS graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dyn...

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Bibliographische Detailangaben

Hauptverfasser:	Fratti, R.A., Moinian, S.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Dynamic range Germanium silicon alloys Heterojunction bipolar transistors Optical amplifiers Optical losses Optical sensors Semiconductor optical amplifiers Silicon germanium Stimulated emission
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