A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems

A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems

A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a 0.13 micron BICMOS graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dyn...

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Bibliographische Detailangaben
Hauptverfasser: Fratti, R.A., Moinian, S.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Dynamic range
Germanium silicon alloys
Heterojunction bipolar transistors
Optical amplifiers
Optical losses
Optical sensors
Semiconductor optical amplifiers
Silicon germanium
Stimulated emission
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Beschreibung
Zusammenfassung:A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a 0.13 micron BICMOS graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dynamic range as opposed to conventional peak detect circuits that follow high gain stages.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2005.1555222