Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers

To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter c...

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Bibliographische Detailangaben

Hauptverfasser:	Tominari, T., Shimamoto, H., Miura, M., Yoshida, Y., Wada, S., Takahashi, H., Arai, M., Hosoe, H., Washio, K., Hashimoto, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Broadband amplifiers Degradation Electrodes Germanium silicon alloys Heterojunction bipolar transistors Low-noise amplifiers Optical amplifiers Parasitic capacitance Silicon germanium
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