Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers
To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter c...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 127 |
|---|---|
| container_issue | |
| container_start_page | 124 |
| container_title | |
| container_volume | |
| creator | Tominari, T. Shimamoto, H. Miura, M. Yoshida, Y. Wada, S. Takahashi, H. Arai, M. Hosoe, H. Washio, K. Hashimoto, T. |
| description | To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter configuration with a high periphery-to-area ratio could be introduced through the advantage of the low parasitic capacitance in the self-aligned structure, and contributed to a further reduction of the base resistance without degradation of f/sub T/ and f/sub max/. As a result, the base resistance was successfully reduced to about 1/3 of the previous HBT. |
| doi_str_mv | 10.1109/BIPOL.2005.1555215 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1555215</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1555215</ieee_id><sourcerecordid>1555215</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-27deac7e40b03909e0a07b376de5b0e584df92d16009b2b997c64ad7c4f0ff1c3</originalsourceid><addsrcrecordid>eNotkNtqAjEURUMvUGv9gfYlP5DpSWZi5jxW8QaCBS30TZLJiaaMo0yGin9focKGvZ42i83Yq4RMSsD30eJztcwUgM6k1lpJfcd6Kjel0Ajf92yApoRrcswBzQPrSShLgQrxiT2n9AOgQJmyx6qvumutqI9n7mwi3lKKqbNNRTxRHYSt464hz9eTGV_HGfH5aJN4OLZ8H3d7kahJsYu_sbvwc_QknG38Fbo9t4dTHUOkNr2wx2DrRINb99lmOtmM52K5mi3GH0sRETqhjCdbGSrAXbUBCSwYl5uhJ-2AdFn4gMrLIQA65RBNNSysN1URIARZ5X329j8biWh7auPBtpft7Z78D9weWIE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Tominari, T. ; Shimamoto, H. ; Miura, M. ; Yoshida, Y. ; Wada, S. ; Takahashi, H. ; Arai, M. ; Hosoe, H. ; Washio, K. ; Hashimoto, T.</creator><creatorcontrib>Tominari, T. ; Shimamoto, H. ; Miura, M. ; Yoshida, Y. ; Wada, S. ; Takahashi, H. ; Arai, M. ; Hosoe, H. ; Washio, K. ; Hashimoto, T.</creatorcontrib><description>To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter configuration with a high periphery-to-area ratio could be introduced through the advantage of the low parasitic capacitance in the self-aligned structure, and contributed to a further reduction of the base resistance without degradation of f/sub T/ and f/sub max/. As a result, the base resistance was successfully reduced to about 1/3 of the previous HBT.</description><identifier>ISSN: 1088-9299</identifier><identifier>ISBN: 9780780393097</identifier><identifier>ISBN: 0780393090</identifier><identifier>EISSN: 2378-590X</identifier><identifier>DOI: 10.1109/BIPOL.2005.1555215</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Broadband amplifiers ; Degradation ; Electrodes ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Low-noise amplifiers ; Optical amplifiers ; Parasitic capacitance ; Silicon germanium</subject><ispartof>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.124-127</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1555215$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1555215$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tominari, T.</creatorcontrib><creatorcontrib>Shimamoto, H.</creatorcontrib><creatorcontrib>Miura, M.</creatorcontrib><creatorcontrib>Yoshida, Y.</creatorcontrib><creatorcontrib>Wada, S.</creatorcontrib><creatorcontrib>Takahashi, H.</creatorcontrib><creatorcontrib>Arai, M.</creatorcontrib><creatorcontrib>Hosoe, H.</creatorcontrib><creatorcontrib>Washio, K.</creatorcontrib><creatorcontrib>Hashimoto, T.</creatorcontrib><title>Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers</title><title>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005</title><addtitle>BIPOL</addtitle><description>To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter configuration with a high periphery-to-area ratio could be introduced through the advantage of the low parasitic capacitance in the self-aligned structure, and contributed to a further reduction of the base resistance without degradation of f/sub T/ and f/sub max/. As a result, the base resistance was successfully reduced to about 1/3 of the previous HBT.</description><subject>Boron</subject><subject>Broadband amplifiers</subject><subject>Degradation</subject><subject>Electrodes</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Low-noise amplifiers</subject><subject>Optical amplifiers</subject><subject>Parasitic capacitance</subject><subject>Silicon germanium</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>9780780393097</isbn><isbn>0780393090</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkNtqAjEURUMvUGv9gfYlP5DpSWZi5jxW8QaCBS30TZLJiaaMo0yGin9focKGvZ42i83Yq4RMSsD30eJztcwUgM6k1lpJfcd6Kjel0Ajf92yApoRrcswBzQPrSShLgQrxiT2n9AOgQJmyx6qvumutqI9n7mwi3lKKqbNNRTxRHYSt464hz9eTGV_HGfH5aJN4OLZ8H3d7kahJsYu_sbvwc_QknG38Fbo9t4dTHUOkNr2wx2DrRINb99lmOtmM52K5mi3GH0sRETqhjCdbGSrAXbUBCSwYl5uhJ-2AdFn4gMrLIQA65RBNNSysN1URIARZ5X329j8biWh7auPBtpft7Z78D9weWIE</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Tominari, T.</creator><creator>Shimamoto, H.</creator><creator>Miura, M.</creator><creator>Yoshida, Y.</creator><creator>Wada, S.</creator><creator>Takahashi, H.</creator><creator>Arai, M.</creator><creator>Hosoe, H.</creator><creator>Washio, K.</creator><creator>Hashimoto, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers</title><author>Tominari, T. ; Shimamoto, H. ; Miura, M. ; Yoshida, Y. ; Wada, S. ; Takahashi, H. ; Arai, M. ; Hosoe, H. ; Washio, K. ; Hashimoto, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-27deac7e40b03909e0a07b376de5b0e584df92d16009b2b997c64ad7c4f0ff1c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Boron</topic><topic>Broadband amplifiers</topic><topic>Degradation</topic><topic>Electrodes</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Low-noise amplifiers</topic><topic>Optical amplifiers</topic><topic>Parasitic capacitance</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Tominari, T.</creatorcontrib><creatorcontrib>Shimamoto, H.</creatorcontrib><creatorcontrib>Miura, M.</creatorcontrib><creatorcontrib>Yoshida, Y.</creatorcontrib><creatorcontrib>Wada, S.</creatorcontrib><creatorcontrib>Takahashi, H.</creatorcontrib><creatorcontrib>Arai, M.</creatorcontrib><creatorcontrib>Hosoe, H.</creatorcontrib><creatorcontrib>Washio, K.</creatorcontrib><creatorcontrib>Hashimoto, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tominari, T.</au><au>Shimamoto, H.</au><au>Miura, M.</au><au>Yoshida, Y.</au><au>Wada, S.</au><au>Takahashi, H.</au><au>Arai, M.</au><au>Hosoe, H.</au><au>Washio, K.</au><au>Hashimoto, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers</atitle><btitle>Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005</btitle><stitle>BIPOL</stitle><date>2005</date><risdate>2005</risdate><spage>124</spage><epage>127</epage><pages>124-127</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>9780780393097</isbn><isbn>0780393090</isbn><abstract>To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h/sub FE/ and f/sub T/ for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter configuration with a high periphery-to-area ratio could be introduced through the advantage of the low parasitic capacitance in the self-aligned structure, and contributed to a further reduction of the base resistance without degradation of f/sub T/ and f/sub max/. As a result, the base resistance was successfully reduced to about 1/3 of the previous HBT.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.2005.1555215</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1088-9299 |
| ispartof | Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.124-127 |
| issn | 1088-9299 2378-590X |
| language | eng |
| recordid | cdi_ieee_primary_1555215 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Broadband amplifiers Degradation Electrodes Germanium silicon alloys Heterojunction bipolar transistors Low-noise amplifiers Optical amplifiers Parasitic capacitance Silicon germanium |
| title | Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T10%3A47%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Ultra-low%20base%20resistance%20self-aligned%20SEG%20SiGe%20HBTs%20for%20high-sensitivity%20wide-bandwidth%20amplifiers&rft.btitle=Proceedings%20of%20the%20Bipolar/BiCMOS%20Circuits%20and%20Technology%20Meeting,%202005&rft.au=Tominari,%20T.&rft.date=2005&rft.spage=124&rft.epage=127&rft.pages=124-127&rft.issn=1088-9299&rft.eissn=2378-590X&rft.isbn=9780780393097&rft.isbn_list=0780393090&rft_id=info:doi/10.1109/BIPOL.2005.1555215&rft_dat=%3Cieee_6IE%3E1555215%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1555215&rfr_iscdi=true |