Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations

Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m BiCMOS SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge of the collector mask was isolated and chara...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Stricker, A.D., Voegeli, B.T., Feilchenfeld, N.B., Rainey, B.A., Gautsch, M.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Bipolar transistors Electric breakdown Germanium silicon alloys Heterojunction bipolar transistors Implants Impurities Scattering Semiconductor process modeling Silicon germanium
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