Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations

Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations

Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m BiCMOS SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge of the collector mask was isolated and chara...

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Bibliographische Detailangaben
Hauptverfasser: Stricker, A.D., Voegeli, B.T., Feilchenfeld, N.B., Rainey, B.A., Gautsch, M.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Bipolar transistors
Electric breakdown
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Impurities
Scattering
Semiconductor process modeling
Silicon germanium
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Beschreibung
Zusammenfassung:Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m BiCMOS SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge of the collector mask was isolated and characterized. TCAD simulations helped to identify the problem, and find the optimal design point for its solution, which then was confirmed by measurements on hardware.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2005.1555202