Electrothermal stability of bipolar transistors at medium- and high-current operation regimes

Electrothermal stability of bipolar transistors at medium- and high-current operation regimes

Electrothermal behavior of single- and two-finger bipolar transistors at medium and high-current operation is examined thoroughly and described by novel analytical formulations. Combined effects are identified that are responsible for thermally (re)stabilizing Si-and SiGe-base devices.

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Bibliographische Detailangaben
Hauptverfasser: Nenadovic, N., La Spina, L., d'Alessandro, V., Nanver, L.K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Circuit simulation
Circuit stability
Electrothermal effects
Feedback
Resistors
Silicon
Temperature dependence
Thermal resistance
Voltage
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Beschreibung
Zusammenfassung:Electrothermal behavior of single- and two-finger bipolar transistors at medium and high-current operation is examined thoroughly and described by novel analytical formulations. Combined effects are identified that are responsible for thermally (re)stabilizing Si-and SiGe-base devices.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2005.1555198