Large area silicon position sensitive photo-detector: fabrication and characterization

Large area silicon position sensitive photo-detector: fabrication and characterization

In the present work, fabrication and characterization of a silicon position sensitive photo-detector PSD (diffused junction) is given. These detectors are good candidate for the use in laser tracking system and in displacement measurement applications. The responsivity, detectivity and rise time of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hamoudi, W.K., Ismail, R.A., Habib, H.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Fabrication
Impurities
Infrared detectors
Oxidation
Photodiodes
Position measurement
Shape measurement
Silicon
Temperature
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Beschreibung
Zusammenfassung:In the present work, fabrication and characterization of a silicon position sensitive photo-detector PSD (diffused junction) is given. These detectors are good candidate for the use in laser tracking system and in displacement measurement applications. The responsivity, detectivity and rise time of these detectors at the near infrared region (750- 1080) nm were measured and discussed.
ISSN:2160-1518
2160-1534
DOI:10.1109/CAOL.2005.1553838