Simulation of hole transport in p-channel Si MOSFETs

Electron transport in Si inversion layers has been the primary subject of research for many years now [1], but hole transport has been relegated to the background mainly due to the highly complicated valence band-structure in Si. Hole transport is affected by the warping and anisotropy of the valence bands and the band-structure cannot be approximated with an effective mass picture or with an analytical band model. The advent of alternate device structures [2,3&4] aimed at boosting the speed and density of VLSI circuits however, seems to have revived interest.