A monolithically integrated 190-GHz SiGe push-push oscillator

In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz....

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-12, Vol.15 (12), p.862-864
Hauptverfasser:	Wanner, R., Lachner, R., Olbrich, G.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency Germanium silicon alloys Heterojunction bipolar transistor (HBT) Integrated circuit technology Integrated circuits Metal-insulator structures Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits millimeter wave integrated circuits monolithic microwave integrated circuit (MMIC) oscillators Oscillators Oscillators, resonators, synthetizers Power generation Power measurement Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe heterojunction bipolar transistor (HBT) Silicon germanium Transmission lines
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Beschreibung
Zusammenfassung:	In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2005.859996