Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.

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Bibliographische Detailangaben
Hauptverfasser: Swint, R.B., Juodawlkis, P.W., Oakley, D.C., Napoleone, A., Vineis, C.J., Chludzinski, J.W., Turner, G.W., Twichell, J.C., Bloomstein, T.M., Cann, S.G., Efremow, N.N., Hardy, D.E., Marchant, M.F., Rothschild, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Crystallography
Epitaxial growth
Hydrogen
Indium gallium arsenide
Indium phosphide
Interference
Lithography
MOCVD
Quantum dots
Resists
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Beschreibung
Zusammenfassung:InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2005.1548307