Comparison of monolithically integrated mode-locked laser diodes with uni-traveling carrier and multi-quantum well saturable absorbers

For the first time, an integrated mode-locked laser diode (MLLD) with different materials for gain and absorber is realized. The MLLD with uni-traveling-carrier absorber produces 600 fs pulses, compared to 3 ps for all multi-quantum well devices.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lohe, H.-J., Scollo, R., Holzman, J.F., Robin, F., Erni, D., Vogt, W., Gini, E., Jackel, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:For the first time, an integrated mode-locked laser diode (MLLD) with different materials for gain and absorber is realized. The MLLD with uni-traveling-carrier absorber produces 600 fs pulses, compared to 3 ps for all multi-quantum well devices.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2005.1548287