Temperature dependence of avalanche multiplication in submicron silicon devices

Photomultiplication initiated by both pure electron and pure hole injection has been measured in submicron Si p/sup +/-i-n/sup +/ and n/sup +/-i-p/sup +/ diodes with a variety of intrinsic region thicknesses and at temperatures between 15 and 420 K. A local analysis yields expressions for the ioniza...

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Bibliographische Detailangaben

Hauptverfasser:	Massey, D.J., David, J.P.R., Rees, G.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Diodes Electric variables measurement Impact ionization Silicon devices Temperature dependence Temperature distribution Thickness measurement Voltage Wavelength measurement
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