Temperature dependence of avalanche multiplication in submicron silicon devices

Temperature dependence of avalanche multiplication in submicron silicon devices

Photomultiplication initiated by both pure electron and pure hole injection has been measured in submicron Si p/sup +/-i-n/sup +/ and n/sup +/-i-p/sup +/ diodes with a variety of intrinsic region thicknesses and at temperatures between 15 and 420 K. A local analysis yields expressions for the ioniza...

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Bibliographische Detailangaben
Hauptverfasser: Massey, D.J., David, J.P.R., Rees, G.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Diodes
Electric variables measurement
Impact ionization
Silicon devices
Temperature dependence
Temperature distribution
Thickness measurement
Voltage
Wavelength measurement
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Beschreibung
Zusammenfassung:Photomultiplication initiated by both pure electron and pure hole injection has been measured in submicron Si p/sup +/-i-n/sup +/ and n/sup +/-i-p/sup +/ diodes with a variety of intrinsic region thicknesses and at temperatures between 15 and 420 K. A local analysis yields expressions for the ionization coefficients as functions of electric field and of temperature which obey Chynoweth's law. Multiplication at various temperatures is computed and compares favorably with experiment.
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546631