Quantum short-channel compact modeling of drain-current in double-gate MOSFET

Quantum short-channel compact modeling of drain-current in double-gate MOSFET

A continuous compact model for the drain current, including short-channel effects and carrier quantization in double-gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D...

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Hauptverfasser: Munteanu, D., Autran, J.-L., Loussier, X., Harrison, S., Cerutti, R., Skotnickit, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
Electrostatics
Engineering Sciences
Micro and nanotechnologies
Microelectronics
MOSFET circuits
Physics
Quantization
Quantum mechanics
Semiconductor films
Silicon
Thin film circuits
Thin film devices
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Beschreibung
Zusammenfassung:A continuous compact model for the drain current, including short-channel effects and carrier quantization in double-gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. Finally, the model is shown to reproduce with an excellent accuracy experimental drain current in double-gate devices.
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546604