A 21-26-GHz SiGe bipolar power amplifier MMIC

A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of solid-state circuits 2005-12, Vol.40 (12), p.2583-2597
Hauptverfasser:	Cheung, T.S.D., Long, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Applied sciences Balun Baluns Circuit properties Circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Germanium silicon alloys Hardware Heterojunction bipolar transistors Impedance matching Input-output equipment Joining Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave power amplifiers millimeter-wave power amplifiers MMIC power amplifiers MMICs monolithic transformer Noise levels Power amplifiers Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shields SiGe SiGe power amplifiers Silicon germanides Silicon germanium Testing Topology Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!