A 21-26-GHz SiGe bipolar power amplifier MMIC

A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends t...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2005-12, Vol.40 (12), p.2583-2597
Hauptverfasser:	Cheung, T.S.D., Long, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Applied sciences Balun Baluns Circuit properties Circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Germanium silicon alloys Hardware Heterojunction bipolar transistors Impedance matching Input-output equipment Joining Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave power amplifiers millimeter-wave power amplifiers MMIC power amplifiers MMICs monolithic transformer Noise levels Power amplifiers Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shields SiGe SiGe power amplifiers Silicon germanides Silicon germanium Testing Topology Transistors
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Zusammenfassung:	A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2005.857424