A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED
We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor...
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| Veröffentlicht in: | IEEE electron device letters 2005-12, Vol.26 (12), p.897-899 |
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| container_end_page | 899 |
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| container_issue | 12 |
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| container_title | IEEE electron device letters |
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| creator | LEE, Jae-Hoon KIM, Ji-Hoon HAN, Min-Koo |
| description | We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel. |
| doi_str_mv | 10.1109/LED.2005.859674 |
| format | Article |
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The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.859674</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Active matrix organic light emitting diodes ; Active matrix organic light-emitting diode (AMOLED) ; Amorphous silicon ; amorphous silicon thin-film transistor (a-Si:H TFT) pixel ; Anodes ; Applied sciences ; Circuits ; degradation ; Devices ; Dielectric, amorphous and glass solid devices ; Display ; Driving ; Electric potential ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Organic light emitting diodes ; Pixels ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stress ; Switched capacitor circuits ; Switches ; Thermal degradation ; Thin film transistors ; Threshold voltage ; Transistors</subject><ispartof>IEEE electron device letters, 2005-12, Vol.26 (12), p.897-899</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-d4f6d007a2a87267e8b756bc7eecaaab64a40d23204ba0269b6ae59c6f435033</citedby><cites>FETCH-LOGICAL-c447t-d4f6d007a2a87267e8b756bc7eecaaab64a40d23204ba0269b6ae59c6f435033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1546146$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1546146$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17306446$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Jae-Hoon</creatorcontrib><creatorcontrib>KIM, Ji-Hoon</creatorcontrib><creatorcontrib>HAN, Min-Koo</creatorcontrib><title>A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.</description><subject>Active matrix organic light emitting diodes</subject><subject>Active matrix organic light-emitting diode (AMOLED)</subject><subject>Amorphous silicon</subject><subject>amorphous silicon thin-film transistor (a-Si:H TFT) pixel</subject><subject>Anodes</subject><subject>Applied sciences</subject><subject>Circuits</subject><subject>degradation</subject><subject>Devices</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Display</subject><subject>Driving</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Organic light emitting diodes</subject><subject>Pixels</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stress</subject><subject>Switched capacitor circuits</subject><subject>Switches</subject><subject>Thermal degradation</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1r3EAMhk1poNu05x56GQptT95oxvNh9xbSpCks5JC9D_JYzk7w2tuZcZr8-8x2Ayk55CAE0qMXSW9RfOKw5Byak9X5z6UAUMtaNdrIN8WCK1WXoHT1tliAkbysOOh3xfsYbwG4lEYuivmUjfSXYXntf1yy9cWa7fw9Dcz54GafmJu2OxojJj_esLShHIHiZho6djcNCW-IxY3vE5v6_0Vw7NhV3oj1U2Dokr8jtsUU_P2_8ofiqMch0senfFysL87XZ5fl6urX77PTVenydqnsZK87AIMCayO0obo1SrfOEDlEbLVECZ2oBMgWQeim1UiqcbqXlYKqOi6-H2R3YfozU0x266OjYcCRpjnautFC5E_Umfz2KilqUKKuZQa_vABvpzmM-QjbcAGmMnqvdnKAXJhiDNTbXfBbDA-Wg92bZfMP7N4sezArT3x9ksXocOgDjs7H5zFTgZZSZ-7zgfNE9NxWUvPcfQQXRZop</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>LEE, Jae-Hoon</creator><creator>KIM, Ji-Hoon</creator><creator>HAN, Min-Koo</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stress</topic><topic>Switched capacitor circuits</topic><topic>Switches</topic><topic>Thermal degradation</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Jae-Hoon</creatorcontrib><creatorcontrib>KIM, Ji-Hoon</creatorcontrib><creatorcontrib>HAN, Min-Koo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Jae-Hoon</au><au>KIM, Ji-Hoon</au><au>HAN, Min-Koo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2005-12-01</date><risdate>2005</risdate><volume>26</volume><issue>12</issue><spage>897</spage><epage>899</epage><pages>897-899</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2005.859674</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2005-12, Vol.26 (12), p.897-899 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Active matrix organic light emitting diodes Active matrix organic light-emitting diode (AMOLED) Amorphous silicon amorphous silicon thin-film transistor (a-Si:H TFT) pixel Anodes Applied sciences Circuits degradation Devices Dielectric, amorphous and glass solid devices Display Driving Electric potential Electronics Exact sciences and technology Optoelectronic devices Organic light emitting diodes Pixels Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Switched capacitor circuits Switches Thermal degradation Thin film transistors Threshold voltage Transistors |
| title | A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED |
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