A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED

We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor...

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Veröffentlicht in:	IEEE electron device letters 2005-12, Vol.26 (12), p.897-899
Hauptverfasser:	LEE, Jae-Hoon, KIM, Ji-Hoon, HAN, Min-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix organic light emitting diodes Active matrix organic light-emitting diode (AMOLED) Amorphous silicon amorphous silicon thin-film transistor (a-Si:H TFT) pixel Anodes Applied sciences Circuits degradation Devices Dielectric, amorphous and glass solid devices Display Driving Electric potential Electronics Exact sciences and technology Optoelectronic devices Organic light emitting diodes Pixels Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Switched capacitor circuits Switches Thermal degradation Thin film transistors Threshold voltage Transistors
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Beschreibung
Zusammenfassung:	We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.859674