630-nm n-type Modulation-doped AlGaInP-AlInP multiquantum-well light-emitting diode
AlGaInP-AlInP multiple quantum-well (MQW) light-emitting diodes (LEDs) with n-type modulation-doped (MD) structure were grown by metal-organic vapor-phase epitaxy. Their characteristics were then evaluated using current-voltage (I-V), electroluminescence and output power measurements. Experimental r...
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Veröffentlicht in: | IEEE photonics technology letters 2006-01, Vol.18 (1), p.25-27 |
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Sprache: | eng |
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Zusammenfassung: | AlGaInP-AlInP multiple quantum-well (MQW) light-emitting diodes (LEDs) with n-type modulation-doped (MD) structure were grown by metal-organic vapor-phase epitaxy. Their characteristics were then evaluated using current-voltage (I-V), electroluminescence and output power measurements. Experimental results indicated that the LEDs exhibited a higher output power, a lower dynamic resistance, and a smaller wavelength variation than conventional LEDs. The n-type MD-MQW LEDs exhibited a higher external quantum efficiency (7.19%) and a larger maximum output power (14.84 mW) under the dc operation as compared to those of 6.73% and 12.55 mW for the conventional LEDs, respectively. This could be tentatively attributed to the better junction heating effect resulting from the n-type MD-MQW structure in which the electron thermal velocity is suppressed, especially at a high-level injection. These positive results could also be explained by the MD-MQW LED supplying a higher electron concentration than in the conventional structure. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2005.859995 |