Model of OFF-ON transition and SET process in phase-change memory

Model of OFF-ON transition and SET process in phase-change memory

We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Savransky, S.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Crystalline materials
Crystallization
Electron microscopy
Electron mobility
Glass
Phase change memory
Tellurium
Temperature
Thermal conductivity
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 109
container_issue
container_start_page 5 pp.
container_title
container_volume
creator Savransky, S.D.
description We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials
doi_str_mv 10.1109/NVMT.2005.1541414
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1541414</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1541414</ieee_id><sourcerecordid>1541414</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-6eb877024e3bd0f7e462b8ea2811b0e24271a875b49b882c0418c137754606373</originalsourceid><addsrcrecordid>eNotj8tqwzAURAWl0JD6A0o3-gG7V9K1JS9DiNtCEi9iug2SfZ2oxA8sb_L3NTQzB2Z3YBh7E5AIAfnH8edQJRIgTUSKYukTi3JtYEHlCEa_sCiEX1iCKSLgim0OQ0M3PrS8LIq4PPJ5sn3wsx96bvuGn3YVH6ehphC47_l4tYHi-mr7C_GOumG6v7Ln1t4CRY9ds6rYVduveF9-fm83-9jnMMcZOaM1SCTlGmg1YSadISuNEA5IotTCGp06zJ0xsgYUphZK6xQzyJRWa_b-r_VEdB4n39npfn78VH92IUXA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Model of OFF-ON transition and SET process in phase-change memory</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Savransky, S.D.</creator><creatorcontrib>Savransky, S.D.</creatorcontrib><description>We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials</description><identifier>ISBN: 9780780394087</identifier><identifier>ISBN: 0780394089</identifier><identifier>DOI: 10.1109/NVMT.2005.1541414</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Crystalline materials ; Crystallization ; Electron microscopy ; Electron mobility ; Glass ; Phase change memory ; Tellurium ; Temperature ; Thermal conductivity</subject><ispartof>Symposium Non-Volatile Memory Technology 2005, 2005, p.5 pp.-109</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1541414$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1541414$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Savransky, S.D.</creatorcontrib><title>Model of OFF-ON transition and SET process in phase-change memory</title><title>Symposium Non-Volatile Memory Technology 2005</title><addtitle>NVMT</addtitle><description>We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials</description><subject>Charge carrier processes</subject><subject>Crystalline materials</subject><subject>Crystallization</subject><subject>Electron microscopy</subject><subject>Electron mobility</subject><subject>Glass</subject><subject>Phase change memory</subject><subject>Tellurium</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><isbn>9780780394087</isbn><isbn>0780394089</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwzAURAWl0JD6A0o3-gG7V9K1JS9DiNtCEi9iug2SfZ2oxA8sb_L3NTQzB2Z3YBh7E5AIAfnH8edQJRIgTUSKYukTi3JtYEHlCEa_sCiEX1iCKSLgim0OQ0M3PrS8LIq4PPJ5sn3wsx96bvuGn3YVH6ehphC47_l4tYHi-mr7C_GOumG6v7Ln1t4CRY9ds6rYVduveF9-fm83-9jnMMcZOaM1SCTlGmg1YSadISuNEA5IotTCGp06zJ0xsgYUphZK6xQzyJRWa_b-r_VEdB4n39npfn78VH92IUXA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Savransky, S.D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Model of OFF-ON transition and SET process in phase-change memory</title><author>Savransky, S.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6eb877024e3bd0f7e462b8ea2811b0e24271a875b49b882c0418c137754606373</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Charge carrier processes</topic><topic>Crystalline materials</topic><topic>Crystallization</topic><topic>Electron microscopy</topic><topic>Electron mobility</topic><topic>Glass</topic><topic>Phase change memory</topic><topic>Tellurium</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><toplevel>online_resources</toplevel><creatorcontrib>Savransky, S.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Savransky, S.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Model of OFF-ON transition and SET process in phase-change memory</atitle><btitle>Symposium Non-Volatile Memory Technology 2005</btitle><stitle>NVMT</stitle><date>2005</date><risdate>2005</risdate><spage>5 pp.</spage><epage>109</epage><pages>5 pp.-109</pages><isbn>9780780394087</isbn><isbn>0780394089</isbn><abstract>We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials</abstract><pub>IEEE</pub><doi>10.1109/NVMT.2005.1541414</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 9780780394087
ispartof Symposium Non-Volatile Memory Technology 2005, 2005, p.5 pp.-109
issn
language eng
recordid cdi_ieee_primary_1541414
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Charge carrier processes
Crystalline materials
Crystallization
Electron microscopy
Electron mobility
Glass
Phase change memory
Tellurium
Temperature
Thermal conductivity
title Model of OFF-ON transition and SET process in phase-change memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T02%3A24%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Model%20of%20OFF-ON%20transition%20and%20SET%20process%20in%20phase-change%20memory&rft.btitle=Symposium%20Non-Volatile%20Memory%20Technology%202005&rft.au=Savransky,%20S.D.&rft.date=2005&rft.spage=5%20pp.&rft.epage=109&rft.pages=5%20pp.-109&rft.isbn=9780780394087&rft.isbn_list=0780394089&rft_id=info:doi/10.1109/NVMT.2005.1541414&rft_dat=%3Cieee_6IE%3E1541414%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1541414&rfr_iscdi=true