Model of OFF-ON transition and SET process in phase-change memory

Model of OFF-ON transition and SET process in phase-change memory

We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials

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Bibliographische Detailangaben
1. Verfasser: Savransky, S.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Crystalline materials
Crystallization
Electron microscopy
Electron mobility
Glass
Phase change memory
Tellurium
Temperature
Thermal conductivity
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Beschreibung
Zusammenfassung:We discuss microscopic scenario of electron-driven OFF-ON transition that allows to explain many observed features of behavior of glassy chalcogenide alloys like Ge 2 Sb 2 Te 5 . We show that SET process consists of collective re-arrangement of atoms and vacancies in such materials
DOI:10.1109/NVMT.2005.1541414