An overview of twin-flash technology
The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shrink path beyond the 40 nm node is shown and discuss...
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| creator | Stein, E.G. Kusters, K.-H. Kamienski, V. Isler, M. Mikolajick, T. Ludwig, C. Schulze, N. Nagel, N. Riedel, S. Willer, J. |
| description | The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shrink path beyond the 40 nm node is shown and discussed |
| doi_str_mv | 10.1109/NVMT.2005.1541378 |
| format | Conference Proceeding |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Channel hot electron injection Charge carrier processes Costs Digital cameras Electron traps Fabrication Hot carriers Programming profession Smart phones Voltage |
| title | An overview of twin-flash technology |
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