Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices
Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 7 |
|---|---|
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Page, T.E. Benedetto, J.M. |
| description | Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg. |
| doi_str_mv | 10.1109/REDW.2005.1532657 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1532657</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1532657</ieee_id><sourcerecordid>1532657</sourcerecordid><originalsourceid>FETCH-LOGICAL-c223t-8d21a97eb8040240ddeca7b094acd1ea57963d189a8c0a3d684bf5d15ed81cfd3</originalsourceid><addsrcrecordid>eNo9kMtqwzAUREUf0JLmA0o3WiYLpXpYlrwMafqAmECS0mWQpWusYtnBckrzEf3nGhoKAwNn5t7FIHTP6Iwxmj1ulk8fM06pnDEpeCrVBbrlTCaESiEv0ThTmg4SmUiVuvrPWHaDxjF-UkoZ1ynX6hb9LL_7DgLg2vS2Oh5wPEYLh94Xvvb9CfsGh9ZB12DbhgCd9aYmbVmSvgISK6hLPFmsd9vpUGva4aTyFrMcm8bhJMeLfL3FsTf9QLuBtYEYayFGHCC03QlPtpt5PsUOvvyA79B1aeoI47OP0Pvzcrd4Jav1y9tiviKWc9ET7TgzmYJC04TyhDoH1qiCZomxjoGRKkuFYzoz2lIjXKqTopSOSXCa2dKJEXr4--sBYH_ofDDdaX8eU_wCpM9nDw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Page, T.E. ; Benedetto, J.M.</creator><creatorcontrib>Page, T.E. ; Benedetto, J.M.</creatorcontrib><description>Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.</description><identifier>ISSN: 2154-0519</identifier><identifier>ISBN: 9780780393677</identifier><identifier>ISBN: 0780393678</identifier><identifier>EISSN: 2154-0535</identifier><identifier>DOI: 10.1109/REDW.2005.1532657</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aerospace industry ; Artificial satellites ; Laboratories ; Manufacturing ; Military satellites ; Missiles ; Random access memory ; Satellite broadcasting ; Semiconductor device testing ; Space technology</subject><ispartof>IEEE Radiation Effects Data Workshop, 2005, 2005, p.1-7</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-8d21a97eb8040240ddeca7b094acd1ea57963d189a8c0a3d684bf5d15ed81cfd3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1532657$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1532657$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Page, T.E.</creatorcontrib><creatorcontrib>Benedetto, J.M.</creatorcontrib><title>Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices</title><title>IEEE Radiation Effects Data Workshop, 2005</title><addtitle>REDW</addtitle><description>Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.</description><subject>Aerospace industry</subject><subject>Artificial satellites</subject><subject>Laboratories</subject><subject>Manufacturing</subject><subject>Military satellites</subject><subject>Missiles</subject><subject>Random access memory</subject><subject>Satellite broadcasting</subject><subject>Semiconductor device testing</subject><subject>Space technology</subject><issn>2154-0519</issn><issn>2154-0535</issn><isbn>9780780393677</isbn><isbn>0780393678</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kMtqwzAUREUf0JLmA0o3WiYLpXpYlrwMafqAmECS0mWQpWusYtnBckrzEf3nGhoKAwNn5t7FIHTP6Iwxmj1ulk8fM06pnDEpeCrVBbrlTCaESiEv0ThTmg4SmUiVuvrPWHaDxjF-UkoZ1ynX6hb9LL_7DgLg2vS2Oh5wPEYLh94Xvvb9CfsGh9ZB12DbhgCd9aYmbVmSvgISK6hLPFmsd9vpUGva4aTyFrMcm8bhJMeLfL3FsTf9QLuBtYEYayFGHCC03QlPtpt5PsUOvvyA79B1aeoI47OP0Pvzcrd4Jav1y9tiviKWc9ET7TgzmYJC04TyhDoH1qiCZomxjoGRKkuFYzoz2lIjXKqTopSOSXCa2dKJEXr4--sBYH_ofDDdaX8eU_wCpM9nDw</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Page, T.E.</creator><creator>Benedetto, J.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices</title><author>Page, T.E. ; Benedetto, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-8d21a97eb8040240ddeca7b094acd1ea57963d189a8c0a3d684bf5d15ed81cfd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aerospace industry</topic><topic>Artificial satellites</topic><topic>Laboratories</topic><topic>Manufacturing</topic><topic>Military satellites</topic><topic>Missiles</topic><topic>Random access memory</topic><topic>Satellite broadcasting</topic><topic>Semiconductor device testing</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Page, T.E.</creatorcontrib><creatorcontrib>Benedetto, J.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Page, T.E.</au><au>Benedetto, J.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices</atitle><btitle>IEEE Radiation Effects Data Workshop, 2005</btitle><stitle>REDW</stitle><date>2005</date><risdate>2005</risdate><spage>1</spage><epage>7</epage><pages>1-7</pages><issn>2154-0519</issn><eissn>2154-0535</eissn><isbn>9780780393677</isbn><isbn>0780393678</isbn><abstract>Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.</abstract><pub>IEEE</pub><doi>10.1109/REDW.2005.1532657</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2154-0519 |
| ispartof | IEEE Radiation Effects Data Workshop, 2005, 2005, p.1-7 |
| issn | 2154-0519 2154-0535 |
| language | eng |
| recordid | cdi_ieee_primary_1532657 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aerospace industry Artificial satellites Laboratories Manufacturing Military satellites Missiles Random access memory Satellite broadcasting Semiconductor device testing Space technology |
| title | Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T13%3A29%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Extreme%20latchup%20susceptibility%20in%20modern%20commercial-off-the-shelf%20(COTS)%20monolithic%201M%20and%204M%20CMOS%20static%20random-access%20memory%20(SRAM)%20devices&rft.btitle=IEEE%20Radiation%20Effects%20Data%20Workshop,%202005&rft.au=Page,%20T.E.&rft.date=2005&rft.spage=1&rft.epage=7&rft.pages=1-7&rft.issn=2154-0519&rft.eissn=2154-0535&rft.isbn=9780780393677&rft.isbn_list=0780393678&rft_id=info:doi/10.1109/REDW.2005.1532657&rft_dat=%3Cieee_6IE%3E1532657%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1532657&rfr_iscdi=true |