Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices

Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices

Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.

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Bibliographische Detailangaben
Hauptverfasser: Page, T.E., Benedetto, J.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aerospace industry
Artificial satellites
Laboratories
Manufacturing
Military satellites
Missiles
Random access memory
Satellite broadcasting
Semiconductor device testing
Space technology
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Beschreibung
Zusammenfassung:Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2005.1532657