Temperature behavior of AlGaN/GaN on SiC HEMTs

This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and sta...

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Hauptverfasser:	Darwish, A.M., Huebschman, B., Del Rosario, R., Viveiros, E., Hung, H.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Current measurement Decision support systems Gallium nitride HEMTs Manufacturing MODFETs Silicon carbide Temperature distribution Transconductance
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creator	Darwish, A.M. Huebschman, B. Del Rosario, R. Viveiros, E. Hung, H.A.
description	This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and statistics are studied. The typical temperature-coefficients (TC) are established for I/sub dss/, g/sub m/, and MSG in GaN technology. This information is useful for MMIC designs. The minimum temperature coefficients compare well with theoretical expectations. Finally, a correlation is observed between the temperature behavior of RF and DC parameters.
doi_str_mv	10.1109/CSICS.2005.1531790
format	Conference Proceeding
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CSIC '05</btitle><stitle>CSICS</stitle><date>2005</date><risdate>2005</risdate><spage>4 pp.</spage><pages>4 pp.-</pages><issn>1550-8781</issn><eissn>2374-8443</eissn><isbn>0780392507</isbn><isbn>9780780392502</isbn><abstract>This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and statistics are studied. The typical temperature-coefficients (TC) are established for I/sub dss/, g/sub m/, and MSG in GaN technology. This information is useful for MMIC designs. The minimum temperature coefficients compare well with theoretical expectations. Finally, a correlation is observed between the temperature behavior of RF and DC parameters.</abstract><pub>IEEE</pub><doi>10.1109/CSICS.2005.1531790</doi><oa>free_for_read</oa></addata></record>
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subjects	Aluminum gallium nitride Current measurement Decision support systems Gallium nitride HEMTs Manufacturing MODFETs Silicon carbide Temperature distribution Transconductance
title	Temperature behavior of AlGaN/GaN on SiC HEMTs
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