Temperature behavior of AlGaN/GaN on SiC HEMTs

Temperature behavior of AlGaN/GaN on SiC HEMTs

This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and sta...

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Bibliographische Detailangaben
Hauptverfasser: Darwish, A.M., Huebschman, B., Del Rosario, R., Viveiros, E., Hung, H.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Current measurement
Decision support systems
Gallium nitride
HEMTs
Manufacturing
MODFETs
Silicon carbide
Temperature distribution
Transconductance
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Beschreibung
Zusammenfassung:This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and statistics are studied. The typical temperature-coefficients (TC) are established for I/sub dss/, g/sub m/, and MSG in GaN technology. This information is useful for MMIC designs. The minimum temperature coefficients compare well with theoretical expectations. Finally, a correlation is observed between the temperature behavior of RF and DC parameters.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2005.1531790