GaAsSb DHBT IC technology for RF and microwave instrumentation
A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with...
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| creator | Low, T.S. Dvorak, M.W. Farhoud, M. Yeats, R.E. Iwamoto, M. Essilfie, G.K. Engel, T. Keppeler, B. Chang, J.S.C. Hadley, J. Patterson, G. Kellert, F. Moll, N. Bahl, S.R. Hutchinson, C.P. Ehlers, E. Adamski, M.E. Culver, M.K. D'Avanzo, D.C. Shirley, T. |
| description | A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products. |
| doi_str_mv | 10.1109/CSICS.2005.1531760 |
| format | Conference Proceeding |
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The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.</description><identifier>ISSN: 1550-8781</identifier><identifier>ISBN: 0780392507</identifier><identifier>ISBN: 9780780392502</identifier><identifier>EISSN: 2374-8443</identifier><identifier>DOI: 10.1109/CSICS.2005.1531760</identifier><language>eng</language><publisher>IEEE</publisher><subject>Indium phosphide ; Instruments ; Manufacturing ; Microwave integrated circuits ; Microwave technology ; MIM capacitors ; Production ; Radio frequency ; Radiofrequency integrated circuits ; Resistors</subject><ispartof>IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. 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CSIC '05</title><addtitle>CSICS</addtitle><description>A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.</description><subject>Indium phosphide</subject><subject>Instruments</subject><subject>Manufacturing</subject><subject>Microwave integrated circuits</subject><subject>Microwave technology</subject><subject>MIM capacitors</subject><subject>Production</subject><subject>Radio frequency</subject><subject>Radiofrequency integrated circuits</subject><subject>Resistors</subject><issn>1550-8781</issn><issn>2374-8443</issn><isbn>0780392507</isbn><isbn>9780780392502</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKw0AUQAcfYFr9Ad3MDyTeO4_MzEaoqW0DBcHUdbnJTDTSJJJEpX-vYFfnrA4cxm4REkRw91mRZ0UiAHSCWqJJ4YxFQhoVW6XkOZuBsSCd0GAuWIRaQ2yNxSs2G8cPAPnnJmIPa1qMRcmXm8cdzzM-heq96w_925HX_cBfVpw6z9umGvof-g686cZp-GpDN9HU9N01u6zpMIabE-fsdfW0yzbx9nmdZ4tt3KDRU1xjkMrVzouarLWaiIIwyhl0CiollLJQetQipJX3qiyVJyTjUu9sasHJObv77zYhhP3n0LQ0HPenb_kLCdhJHw</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Low, T.S.</creator><creator>Dvorak, M.W.</creator><creator>Farhoud, M.</creator><creator>Yeats, R.E.</creator><creator>Iwamoto, M.</creator><creator>Essilfie, G.K.</creator><creator>Engel, T.</creator><creator>Keppeler, B.</creator><creator>Chang, J.S.C.</creator><creator>Hadley, J.</creator><creator>Patterson, G.</creator><creator>Kellert, F.</creator><creator>Moll, N.</creator><creator>Bahl, S.R.</creator><creator>Hutchinson, C.P.</creator><creator>Ehlers, E.</creator><creator>Adamski, M.E.</creator><creator>Culver, M.K.</creator><creator>D'Avanzo, D.C.</creator><creator>Shirley, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>GaAsSb DHBT IC technology for RF and microwave instrumentation</title><author>Low, T.S. ; Dvorak, M.W. ; Farhoud, M. ; Yeats, R.E. ; Iwamoto, M. ; Essilfie, G.K. ; Engel, T. ; Keppeler, B. ; Chang, J.S.C. ; Hadley, J. ; Patterson, G. ; Kellert, F. ; Moll, N. ; Bahl, S.R. ; Hutchinson, C.P. ; Ehlers, E. ; Adamski, M.E. ; Culver, M.K. ; D'Avanzo, D.C. ; Shirley, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-f1e349f9d2fa8885aaae274971940c424480bd152e6cdd4bb4da1a796d9868093</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Indium phosphide</topic><topic>Instruments</topic><topic>Manufacturing</topic><topic>Microwave integrated circuits</topic><topic>Microwave technology</topic><topic>MIM capacitors</topic><topic>Production</topic><topic>Radio frequency</topic><topic>Radiofrequency integrated circuits</topic><topic>Resistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Low, T.S.</creatorcontrib><creatorcontrib>Dvorak, M.W.</creatorcontrib><creatorcontrib>Farhoud, M.</creatorcontrib><creatorcontrib>Yeats, R.E.</creatorcontrib><creatorcontrib>Iwamoto, M.</creatorcontrib><creatorcontrib>Essilfie, G.K.</creatorcontrib><creatorcontrib>Engel, T.</creatorcontrib><creatorcontrib>Keppeler, B.</creatorcontrib><creatorcontrib>Chang, J.S.C.</creatorcontrib><creatorcontrib>Hadley, J.</creatorcontrib><creatorcontrib>Patterson, G.</creatorcontrib><creatorcontrib>Kellert, F.</creatorcontrib><creatorcontrib>Moll, N.</creatorcontrib><creatorcontrib>Bahl, S.R.</creatorcontrib><creatorcontrib>Hutchinson, C.P.</creatorcontrib><creatorcontrib>Ehlers, E.</creatorcontrib><creatorcontrib>Adamski, M.E.</creatorcontrib><creatorcontrib>Culver, M.K.</creatorcontrib><creatorcontrib>D'Avanzo, D.C.</creatorcontrib><creatorcontrib>Shirley, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Low, T.S.</au><au>Dvorak, M.W.</au><au>Farhoud, M.</au><au>Yeats, R.E.</au><au>Iwamoto, M.</au><au>Essilfie, G.K.</au><au>Engel, T.</au><au>Keppeler, B.</au><au>Chang, J.S.C.</au><au>Hadley, J.</au><au>Patterson, G.</au><au>Kellert, F.</au><au>Moll, N.</au><au>Bahl, S.R.</au><au>Hutchinson, C.P.</au><au>Ehlers, E.</au><au>Adamski, M.E.</au><au>Culver, M.K.</au><au>D'Avanzo, D.C.</au><au>Shirley, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaAsSb DHBT IC technology for RF and microwave instrumentation</atitle><btitle>IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05</btitle><stitle>CSICS</stitle><date>2005</date><risdate>2005</risdate><spage>4 pp.</spage><pages>4 pp.-</pages><issn>1550-8781</issn><eissn>2374-8443</eissn><isbn>0780392507</isbn><isbn>9780780392502</isbn><abstract>A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.</abstract><pub>IEEE</pub><doi>10.1109/CSICS.2005.1531760</doi></addata></record> |
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| identifier | ISSN: 1550-8781 |
| ispartof | IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05, 2005, p.4 pp. |
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| language | eng |
| recordid | cdi_ieee_primary_1531760 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Indium phosphide Instruments Manufacturing Microwave integrated circuits Microwave technology MIM capacitors Production Radio frequency Radiofrequency integrated circuits Resistors |
| title | GaAsSb DHBT IC technology for RF and microwave instrumentation |
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