GaAsSb DHBT IC technology for RF and microwave instrumentation

A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Low, T.S., Dvorak, M.W., Farhoud, M., Yeats, R.E., Iwamoto, M., Essilfie, G.K., Engel, T., Keppeler, B., Chang, J.S.C., Hadley, J., Patterson, G., Kellert, F., Moll, N., Bahl, S.R., Hutchinson, C.P., Ehlers, E., Adamski, M.E., Culver, M.K., D'Avanzo, D.C., Shirley, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Indium phosphide Instruments Manufacturing Microwave integrated circuits Microwave technology MIM capacitors Production Radio frequency Radiofrequency integrated circuits Resistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.
ISSN:	1550-8781 2374-8443
DOI:	10.1109/CSICS.2005.1531760