The effect of modifying grain growth on step coverage, defect densities and stress in Al-Si-Cu thin films

The authors have studied the effect of varying the grain growth on the step coverage and defect densities of vias. By using the test structures described they have been able to quantify the differences between step coverage and defect density issues. The stress measurements and the TEM studies have...

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Bibliographische Detailangaben

Hauptverfasser:	Chittipeddi, S., Ryan, V., Kannan, V.C., Dziuba, C.M., Cochran, W.T., Klemmer, W.O., Buckfeller, J.W., McArdle, M.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Density measurement Failure analysis Metallization Sputtering Stress measurement Temperature Testing Transistors Very large scale integration
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