The effect of modifying grain growth on step coverage, defect densities and stress in Al-Si-Cu thin films

The authors have studied the effect of varying the grain growth on the step coverage and defect densities of vias. By using the test structures described they have been able to quantify the differences between step coverage and defect density issues. The stress measurements and the TEM studies have enabled them to clearly understand the mechanisms of the two-step and ramped depositions. This is the first study which has clearly correlated the electrical results with stress measurements and physical characterization of the films. The authors have also clearly identified and studied the growth mechanism of nuclei in ramped and two-step depositions.< >